Fraunhofer ISE warns of risk from higher than expected UV-induced degradation in TOPCon, PERC, HJT cells

The researchers of the German institute explained that UV-induced degradation may cause larger than expected efficiency and voltage losses in all dominant cell technologies, including TOPCon devices. The scientists expect that silicon nitride layers could be used to enhance TOPCon UV stability compared to PECVD layers typically utilized in PERC and heterojunction cells.